statistiche ricercatore

Nome	#
Effects of beta ray irradiation on 4H-SiC epitaxial layer probed by exciton recombination	37
Influence of ionizing radiations and thermal treatments on 4H-SiC defectivity	35
Substrate impact on the thickness dependence of vibrational and optical properties of large area MoS2produced by gold-assisted exfoliation	22
Defects in epitaxial 4H-SiC revealed by exciton recombination	19
β-rays induced displacement damage on epitaxial 4H-SiC revealed by exciton recombination	16
Vulnerability of epitaxial layers and substrates of 4H-SiC to ionizing radiation and thermal treatments	16
Graphitization effects induced by thermal treatments of 4H-SiC	15
Exciton lifetime of 4H-SiC modified by thermal annealing in high pressure O2	15
Response of epitaxial layer of 4H-SiC to β-rays and X-rays irradiation	14
Comparison of the effects of electrons and X-rays irradiation on epitaxial layers of 4H-SiC	12
Totale	201

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	8	0	0	0	0	0	0	0	6	0	0	0	2
2022/2023	5	1	3	0	0	0	1	0	0	0	0	0	0
2023/2024	68	0	0	0	0	1	0	0	1	13	7	32	14
2024/2025	120	21	41	16	20	12	10	0	0	0	0	0	0
Totale													201

Archivio istituzionale della ricerca dell'Università degli Studi di Palermo