Wide bandgap material-based devices allow faster switching frequency and exhibit smaller losses than traditional Si devices; nevertheless, a complete understanding of the functioning of these new devices remains poorly understood. A fast battery charger for electric vehicles based on a converter employing SiC and GaN devices is here reported Besides, these two technologies are experimentally compared, in the same layout, to highlights their performance in terms of electrical dynamic and electromagnetic compatibility.

Daniele Scirè, G.G. (2024). Implementation and Comparison of SiC and GaN switches for EV Fast Recharging Systems. In 2023 Asia Meeting on Environment and Electrical Engineering (EEE-AM). Hanoi : IEEE [10.1109/EEE-AM58328.2023.10395658].

Implementation and Comparison of SiC and GaN switches for EV Fast Recharging Systems

Daniele Scirè
Primo
;
Giovanni Garraffa;Giuseppe Lullo;Gianpaolo Vitale;Pasquale Cusumano;costantino giaconia;Alessandro Busacca;Antonino Sferlazza
Ultimo
2024-01-25

Abstract

Wide bandgap material-based devices allow faster switching frequency and exhibit smaller losses than traditional Si devices; nevertheless, a complete understanding of the functioning of these new devices remains poorly understood. A fast battery charger for electric vehicles based on a converter employing SiC and GaN devices is here reported Besides, these two technologies are experimentally compared, in the same layout, to highlights their performance in terms of electrical dynamic and electromagnetic compatibility.
25-gen-2024
Settore ING-INF/01 - Elettronica
Settore ING-INF/04 - Automatica
979-8-3503-8106-1
979-8-3503-8105-4
979-8-3503-8107-8
Daniele Scirè, G.G. (2024). Implementation and Comparison of SiC and GaN switches for EV Fast Recharging Systems. In 2023 Asia Meeting on Environment and Electrical Engineering (EEE-AM). Hanoi : IEEE [10.1109/EEE-AM58328.2023.10395658].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/619116
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