The recent improvement in semiconductor devices has led to higher efficiency and power density. SiC and GaN offer higher switching frequencies and lower losses; however, the knowledge of the behavior of these devices is not mature. In this paper, a system for fast charging of batteries for electric vehicles based on an isolated DC-DC converter equipped with both SiC and GaN devices is presented, and an experimental comparison among these two technologies will be given in terms of dynamic performances, electromagnetic compatibility, stability, efficiency.
Busacca, A., Calabretta, M., Cusumano, P., Garraffa, G., Messina, A.A., Scirè, D., et al. (2024). Performances Evaluation of Electric Vehicles Recharging Systems Implementing Silicon Carbide and Gallium Nitride Switches. In L.E. Ciofi Carmine (a cura di), Proceedings of SIE 2023 (pp. 314-319). Springer Nature Switzerland AG [10.1007/978-3-031-48711-8_38].
Performances Evaluation of Electric Vehicles Recharging Systems Implementing Silicon Carbide and Gallium Nitride Switches
Busacca, Alessandro;Cusumano, Pasquale;Scirè, Daniele
;Sferlazza, Antonino;Vitale, Gianpaolo
2024-01-01
Abstract
The recent improvement in semiconductor devices has led to higher efficiency and power density. SiC and GaN offer higher switching frequencies and lower losses; however, the knowledge of the behavior of these devices is not mature. In this paper, a system for fast charging of batteries for electric vehicles based on an isolated DC-DC converter equipped with both SiC and GaN devices is presented, and an experimental comparison among these two technologies will be given in terms of dynamic performances, electromagnetic compatibility, stability, efficiency.File | Dimensione | Formato | |
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