Hydrogenated amorphous silicon (a-Si:H) has been deposited by plasma enhanced chemical vapor deposition (PECVD) both on SnO2:F and on Mo layers by using an UNAXIS KAI 1M system. Boron and phosphorous doping, respectively for the p-type and n-type a-Si:H layers, was performed in-situ during the deposition.
Foti, M., Cannella, G., Gerardi, C., Di Marco, S., Ravesi, S., Sparta, N., et al. (2011). Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells. In Photovoltaics for the 21st Century 7 ECS Transactions. M. Tao et al..
Role of the Back Metal-Semiconductor Contact on the Performances of a-Si:H Solar Cells
CANNELLA, Giuseppe;PRINCIPATO, Fabio;
2011-08-01
Abstract
Hydrogenated amorphous silicon (a-Si:H) has been deposited by plasma enhanced chemical vapor deposition (PECVD) both on SnO2:F and on Mo layers by using an UNAXIS KAI 1M system. Boron and phosphorous doping, respectively for the p-type and n-type a-Si:H layers, was performed in-situ during the deposition.
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