We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
Tomasino, A., Piccoli, R., Jestin, Y., Busacca, A., Delprat, S., Chaker, M., et al. (2018). Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection. In CLEO 2018 - Proceedings [10.1364/CLEO_QELS.2018.FF1E.1].
Silicon nitride-based deep sub-λ slit for ultra-broadband THz coherent detection
Tomasino, Alessandro;Busacca, Alessandro;
2018-01-01
Abstract
We report on the characterization of a new type of CMOS-compatible device for terahertz solid-state biased coherent detection, which relies on a 1-µm-wide metallic slit embedded in a thin film of PECVD-grown silicon nitride.
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