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EnglishThis chapter deals with a critical review on p-type doping of ZnO. In the past 15 years, ZnO has attracted considerable attention due to its unique properties, which make it a promising material for optoelectronic devices applications. However, a reliable p-type ZnO doping remains a major challenge because of self-compensation effects; thus, despite the advantages of these devices, the fabrication of ZnO-based devices is hampered by the lack of a stable p-type doping. A careful and critical analysis of the results reported in literature raises many doubts about the correctness of the doping-type assignments and, in general, the values of the electrical parameters reported. A historical survey of researchers’ attempts of doping ZnO p-type is given here, together with several possible explanations about the causes of the failures
Mosca, M., Macaluso, R., Caruso, F., Lo Muzzo, V., & Cali', C. (2015). The p-Type Doping of ZnO: Mirage or Reality?. In D. Persano Adorno, & S. Pokutnyi (a cura di), Advances in Semiconductor Research: Physics of Nanosystems, Spintronics and Technological Applications. New York : Nova Science Publishers.
| Data di pubblicazione: | 2015 | |
| Titolo: | The p-Type Doping of ZnO: Mirage or Reality? | |
| Autori: | ||
| Citazione: | Mosca, M., Macaluso, R., Caruso, F., Lo Muzzo, V., & Cali', C. (2015). The p-Type Doping of ZnO: Mirage or Reality?. In D. Persano Adorno, & S. Pokutnyi (a cura di), Advances in Semiconductor Research: Physics of Nanosystems, Spintronics and Technological Applications. New York : Nova Science Publishers. | |
| Abstract: | This chapter deals with a critical review on p-type doping of ZnO. In the past 15 years, ZnO has attracted considerable attention due to its unique properties, which make it a promising material for optoelectronic devices applications. However, a reliable p-type ZnO doping remains a major challenge because of self-compensation effects; thus, despite the advantages of these devices, the fabrication of ZnO-based devices is hampered by the lack of a stable p-type doping. A careful and critical analysis of the results reported in literature raises many doubts about the correctness of the doping-type assignments and, in general, the values of the electrical parameters reported. A historical survey of researchers’ attempts of doping ZnO p-type is given here, together with several possible explanations about the causes of the failures | |
| Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica | |
| Appare nelle tipologie: | 2.01 Capitolo o Saggio |
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