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EnglishOrganic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization of a Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristics showed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in the triode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of the devices.
Mosca, M., Macaluso, R., Randazzo, G., Di Bella, M., Caruso, F., Cali', C., et al. (2014). Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors. ECS SOLID STATE LETTERS, 3(1), P7-P9.
| Data di pubblicazione: | 2014 |
| Titolo: | Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors |
| Autori: | |
| Citazione: | Mosca, M., Macaluso, R., Randazzo, G., Di Bella, M., Caruso, F., Cali', C., et al. (2014). Anodized Ti-Si Alloy as Gate Oxide of Electrochemically-Fabricated Organic Field-Effect Transistors. ECS SOLID STATE LETTERS, 3(1), P7-P9. |
| Rivista: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1149/2.007401ssl |
| Abstract: | Organic field-effect transistors were fabricated using an electrochemical route. The dielectric oxide was grown by anodization of a Ti:Si alloy, while 3,4-polyethylenedioxythiophene has been employed as a semiconducting polymer. OutputI-Vcharacteristics showed a transistor effect dependent on dielectric thickness. Fitting between I-V measurements and theoretical simulations in the triode region confirmed the presence of a conduction path through the polymer which degrades the electrical characteristics of the devices. |
| URL: | http://ssl.ecsdl.org/content/3/1/P7.full.pdf+html?sid=f321bcc0-80c8-440f-80f6-4a15087d0e5c |
| Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica Settore ING-IND/23 - Chimica Fisica Applicata |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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| ECS Solid State Lett.-2014-Mosca-P7-9.pdf | Articolo pubblicato | N/A | Administrator Richiedi una copia |
http://hdl.handle.net/10447/89588
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