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EnglishWe report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
| Data di pubblicazione: | 2013 |
| Titolo: | Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime |
| Autori: | |
| Citazione: | Adamo, G., Agro', D., Stivala, S., Parisi, A., Giaconia, G., Busacca, A., et al. (2013). Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3718-3725. |
| Rivista: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TED.2013.2282709 |
| Abstract: | We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes. |
| URL: | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6616585&queryText%3Dadamo+sipm |
| Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica Settore ING-INF/02 - Campi Elettromagnetici |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/10447/84235
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