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EnglishWe report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
Adamo, G., Agro', D., Stivala, S., Parisi, A., Giaconia, G., Busacca, A., et al. (2013). Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3718-3725 [10.1109/TED.2013.2282709].
| Data di pubblicazione: | 2013 | |
| Titolo: | Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime | |
| Autori: | ||
| Citazione: | Adamo, G., Agro', D., Stivala, S., Parisi, A., Giaconia, G., Busacca, A., et al. (2013). Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 3718-3725 [10.1109/TED.2013.2282709]. | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/TED.2013.2282709 | |
| Abstract: | We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes. | |
| URL: | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6616585&queryText%3Dadamo+sipm | |
| Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica Settore ING-INF/02 - Campi Elettromagnetici | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/10447/84235
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