We report on ZnO epitaxial growth by pulsed-laser deposition (PLD) on different substrates, such as quartz, sapphire, and GaN template. Approximately 1 μm-thick films were grown under different substrate temperatures and background oxygen conditions. X-ray diffraction analysis indicated preferential growth along the c-axis direction with a full-width at half maximum (FWHM) of the rocking curve as narrow as 230 arcs in the case of the GaN template. Low-temperature photoluminescence showed A-excitonic emission near 3.36 eV and a FWHM of D0XA emission as small as 2.89 meV at 9 K. Atomic force microscope measurements showed that roughness as low as 18 nm could be obtained. These results prove that PLD is a low-cost technique suitable to grow heteroepitaxial ZnO layers with excellent properties in terms of luminescence, crystallinity and morphology
Mosca, M., Macaluso, R., Calì, C., Butté, R., Nicolay, S., Feltin, E., et al. (2013). Optical, structural, and morphological characterisation of epitaxial ZnO filas grown by pulsed-laser deposition. THIN SOLID FILMS, 539, 55-59 [http://dx.doi.org/10.1016/j.tsf.2013.04.146].
Optical, structural, and morphological characterisation of epitaxial ZnO filas grown by pulsed-laser deposition
MOSCA, Mauro;MACALUSO, Roberto;CALI', Claudio;
2013-01-01
Abstract
We report on ZnO epitaxial growth by pulsed-laser deposition (PLD) on different substrates, such as quartz, sapphire, and GaN template. Approximately 1 μm-thick films were grown under different substrate temperatures and background oxygen conditions. X-ray diffraction analysis indicated preferential growth along the c-axis direction with a full-width at half maximum (FWHM) of the rocking curve as narrow as 230 arcs in the case of the GaN template. Low-temperature photoluminescence showed A-excitonic emission near 3.36 eV and a FWHM of D0XA emission as small as 2.89 meV at 9 K. Atomic force microscope measurements showed that roughness as low as 18 nm could be obtained. These results prove that PLD is a low-cost technique suitable to grow heteroepitaxial ZnO layers with excellent properties in terms of luminescence, crystallinity and morphologyFile | Dimensione | Formato | |
---|---|---|---|
Mosca_TSF_2013.pdf
Solo gestori archvio
Descrizione: Articolo
Dimensione
735.25 kB
Formato
Adobe PDF
|
735.25 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.