SrMoO3 (SMO) thin films offer exceptional UV transparency and metallic conductivity, making them ideal transparent electrodes for UV-C LEDs. However, their deposition is challenged by thermodynamic instability, where trace oxygen triggers oxidation to insulating SrMoO4. This study employs pulsed laser deposition (PLD) under either high vacuum or oxygen, or argon atmosphere, to grow epitaxial SMO on latticematched (001) LSAT and (110) GdScO3 substrates. Structural and electrical characterization reveals that oxygen pressures induce SrMoO4 formation, increasing sheet resistance. Critically, postdeposition vacuum annealing at 850°C decomposes SrMoO4 inclusions, reducing resistance by three orders of magnitude. These results establish oxygen suppression during growth and corrective annealing as essential strategies for realizing highconductivity SMO electrodes in UV-C optoelectronics..
Kamble, N., Inguanta, R., Megna, B., Crupi, I., Macaluso, R., Mosca, M. (2025). On the Growth of SrMoO3 Films for UV-C LEDs Applications: Deposition Issues and Solutions. In On the Growth of SrMoO₃ Films for UV-C LEDs Applications: Deposition Issues and Solutions (pp. 117-120). 345 E 47TH ST, NEW YORK, NY 10017 USA : Institute of Electrical and Electronics Engineers Inc. [10.1109/ogc66041.2025.11262060].
On the Growth of SrMoO3 Films for UV-C LEDs Applications: Deposition Issues and Solutions
Kamble, Nitin;Inguanta, Rosalinda;Megna, Bartolomeo;Crupi, Isodiana;Macaluso, Roberto;Mosca, Mauro
2025-01-01
Abstract
SrMoO3 (SMO) thin films offer exceptional UV transparency and metallic conductivity, making them ideal transparent electrodes for UV-C LEDs. However, their deposition is challenged by thermodynamic instability, where trace oxygen triggers oxidation to insulating SrMoO4. This study employs pulsed laser deposition (PLD) under either high vacuum or oxygen, or argon atmosphere, to grow epitaxial SMO on latticematched (001) LSAT and (110) GdScO3 substrates. Structural and electrical characterization reveals that oxygen pressures induce SrMoO4 formation, increasing sheet resistance. Critically, postdeposition vacuum annealing at 850°C decomposes SrMoO4 inclusions, reducing resistance by three orders of magnitude. These results establish oxygen suppression during growth and corrective annealing as essential strategies for realizing highconductivity SMO electrodes in UV-C optoelectronics..
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