This work presents an experimental investigation of the RF performance of a power GaN-on-Si eHEMT produced by STMicroelectronics. The study characterizes the dependence of the SGT120R65AL eHEMT on operating conditions such as bias and temperature, in terms of both DC and RF responses.
Santaluna, M.; Sottile, V.; Busacca, A.; Calandra, E.; Curcio, L.; Giaconia, G.C.; Parisi, A.; Pernice, R.; Stivala, S. (2025, June 25-27).RF Performance of GaN-on-Si Power eHEMTs: Experimental Characterization and Modeling, Accounting for Temperature Dependence.
RF Performance of GaN-on-Si Power eHEMTs: Experimental Characterization and Modeling, Accounting for Temperature Dependence
Marco Santaluna
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;Vincenzo Sottile;Alessandro Busacca;Enrico Calandra;Luciano Curcio;Giuseppe Costantino Giaconia;Antonino Parisi;Riccardo Pernice;Salvatore Stivala
Abstract
This work presents an experimental investigation of the RF performance of a power GaN-on-Si eHEMT produced by STMicroelectronics. The study characterizes the dependence of the SGT120R65AL eHEMT on operating conditions such as bias and temperature, in terms of both DC and RF responses.
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