This paper presents an optimized design of a high-power GaN based power amplifier (PA) tailored for operation in the L/S-band, targeting advanced applications such as 5G-connected vehicles and the Internet of Things (IoT). The PA is implemented as the power stage within a multi stage architecture. The design utilizes the GaN HEMT CGH40025F from MACOM company, biased with a drain voltage of 28 V, a gate voltage of -2.8 V, and a quiescent current of 300 mA. The simulation results show that the PA achieves an output power greater than 20 W and a power-added efficiency (PAE) that exceeds 65% over the 1.9 to 2.3 GHz frequency range.
Gulotta, A., Mendola, L., Miano, L., Soruri, M., Livreri, P. (2025). A 20 W High Gain, High Efficiency L/S-Band Power Amplifier for 5G Connected Cars. In IEEE UCMMT 2025.
A 20 W High Gain, High Efficiency L/S-Band Power Amplifier for 5G Connected Cars
Accursio Gulotta
;Leonardo Mendola;Luigi Miano;Patrizia Livreri
2025-01-01
Abstract
This paper presents an optimized design of a high-power GaN based power amplifier (PA) tailored for operation in the L/S-band, targeting advanced applications such as 5G-connected vehicles and the Internet of Things (IoT). The PA is implemented as the power stage within a multi stage architecture. The design utilizes the GaN HEMT CGH40025F from MACOM company, biased with a drain voltage of 28 V, a gate voltage of -2.8 V, and a quiescent current of 300 mA. The simulation results show that the PA achieves an output power greater than 20 W and a power-added efficiency (PAE) that exceeds 65% over the 1.9 to 2.3 GHz frequency range.
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