A High-Gain, High-Efficiency GaN HEMT Power Amplifier for L/S-Band 5G Vehicle Connectivity

This paper presents an optimized design of a high-power GaN based power amplifier (PA) tailored for operation in the L/S-band, targeting advanced applications such as 5G-connected vehicles and the Internet of Things (IoT). The PA is implemented as the power stage within a multi stage architecture. The design utilizes the GaN HEMT CGH40025F from MACOM company, biased with a drain voltage of 28 V, a gate voltage of -2.8 V, and a quiescent current of 300 mA. The simulation results show that the PA achieves an output power greater than 20 W and a power-added efficiency (PAE) that exceeds 65% over the 1.9 to 2.3 GHz frequency range.