Accelerated neutron tests on Si and SiC power MOSFETs at different temperatures were performed at ChipIr facility (Didcot, UK). The results show a strong correlation between the temperature dependence of the avalanche voltage and that of the neutron failure rate.
Principato F., Cazzaniga C., Kastriotou M., Frost C., Buttacavoli A., Abbene L., et al. (2022). Temperature Dependence of Terrestrial Neutron Induced Failures in Commercial Silicon and Silicon Carbide Power MOSFETs. In RADECS 2022 - European Conference on Radiation and Its Effects on Components and Systems. Institute of Electrical and Electronics Engineers Inc. [10.1109/RADECS55911.2022.10412398].
Temperature Dependence of Terrestrial Neutron Induced Failures in Commercial Silicon and Silicon Carbide Power MOSFETs
Principato F.
;Buttacavoli A.;Abbene L.;
2022-01-01
Abstract
Accelerated neutron tests on Si and SiC power MOSFETs at different temperatures were performed at ChipIr facility (Didcot, UK). The results show a strong correlation between the temperature dependence of the avalanche voltage and that of the neutron failure rate.
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