Pulse duration effect on synaptic plasticity of ZrO2(Y)-based memristive device

This report presents a method for controlling the synaptic plasticity of memristive devices based on changing not only the amplitude of control pulses, but also their duration. The object of study in this work is a ZrO 2 (Y)-based memristive device due to the demonstrated high stability of its resistive switching parameters. It is established that, when a sequence of pulses with varying duration and positive amplitude ≤ +1.0 V is applied, there is no change in the resistive state. At the amplitudes > +1.0 V, the resistance of memristive device increased significantly with increasing pulse duration. It is shown that the dependencies of the average current on the pulse duration can be satisfactorily approximated by an exponential decay function. The proposed protocol is demonstrated to be more efficient for controlling the synaptic plasticity of memristive devices.