The temperature tunability of complex dielectric constants of vanadium dioxide (VO2) makes it a promising phase-change material for use in active, dynamic, tunable photonics applications. Specifically, the semiconductor-to-metal phase transition in VO2 enables reversible, broadband, and large complex refractive index variation and paves the way for a plethora of applications. Although the critical temperature for phase-transition is 68 °C for VO2 films, its transition temperature can be reduced to room temperature by tungsten-doping of vanadium dioxide. Such a degree of freedom in controlling the critical temperature through tungsten doping provides further tunability of the thermochromic behavior. In this work, we investigate a variety of W-doped VO2 thin films deposited by laser ablation of targets with increasing W doping content and report detailed infrared characterization together with numerical simulations. Our experimental results indicate that the perfect absorption can be achieved at different temperatures, within the VO2 insulator-to-metal phase transition process, as a function of W doping content. Tunable subwavelength layers allow perfect absorption under different temperature conditions around λ = 12 µm. We show that a high dynamic range of reflectivity can be achieved when the temperature is increased above the phase transition temperature. Furthermore, we observe perfect absorption at 11.8 µm at room temperature for a W content of 0.75%. We believe that W-doped VO2 thin films with tunable and controllable perfect absorption will open the way for a class of promising thermo-optical devices including thermos-photovoltaics, infrared filters, radiative cooling devices, and thermal emitters.

Larciprete, M.C., Ceneda, D., Scirè, D., Mosca, M., Persano Adorno, D., Dereshgi, S.A., et al. (2023). Tunable IR perfect absorbers enabled by tungsten doped VO2 thin films. APL MATERIALS, 11(9) [10.1063/5.0164410].

Tunable IR perfect absorbers enabled by tungsten doped VO2 thin films

Scirè, Daniele;Mosca, Mauro;Persano Adorno, Dominique;Macaluso, Roberto;
2023-09-11

Abstract

The temperature tunability of complex dielectric constants of vanadium dioxide (VO2) makes it a promising phase-change material for use in active, dynamic, tunable photonics applications. Specifically, the semiconductor-to-metal phase transition in VO2 enables reversible, broadband, and large complex refractive index variation and paves the way for a plethora of applications. Although the critical temperature for phase-transition is 68 °C for VO2 films, its transition temperature can be reduced to room temperature by tungsten-doping of vanadium dioxide. Such a degree of freedom in controlling the critical temperature through tungsten doping provides further tunability of the thermochromic behavior. In this work, we investigate a variety of W-doped VO2 thin films deposited by laser ablation of targets with increasing W doping content and report detailed infrared characterization together with numerical simulations. Our experimental results indicate that the perfect absorption can be achieved at different temperatures, within the VO2 insulator-to-metal phase transition process, as a function of W doping content. Tunable subwavelength layers allow perfect absorption under different temperature conditions around λ = 12 µm. We show that a high dynamic range of reflectivity can be achieved when the temperature is increased above the phase transition temperature. Furthermore, we observe perfect absorption at 11.8 µm at room temperature for a W content of 0.75%. We believe that W-doped VO2 thin films with tunable and controllable perfect absorption will open the way for a class of promising thermo-optical devices including thermos-photovoltaics, infrared filters, radiative cooling devices, and thermal emitters.
11-set-2023
Settore ING-INF/01 - Elettronica
Settore FIS/07 - Fisica Applicata(Beni Culturali, Ambientali, Biol.e Medicin)
Larciprete, M.C., Ceneda, D., Scirè, D., Mosca, M., Persano Adorno, D., Dereshgi, S.A., et al. (2023). Tunable IR perfect absorbers enabled by tungsten doped VO2 thin films. APL MATERIALS, 11(9) [10.1063/5.0164410].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/608613
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