III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
Buffolo M., Roccato N., Piva F., De Santi C., Brescancin R., Casu C., et al. (2022). Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics. In M. Strassburg (a cura di), Proceedings Volume 12022, Light-Emitting Devices, Materials, and Applications XXVI; 120220G (2022). 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA : SPIE-INT SOC OPTICAL ENGINEERING [10.1117/12.2606599].
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics
Mosca M.Membro del Collaboration Group
;
2022-01-01
Abstract
III-N light-emitting-diodes (LEDs) are subject of intense investigations, thanks to their high efficiency and great reliability. The quality of the semiconductor material has a significant impact on the electro-optical performance of LEDs: for this reason, a detailed characterization of defect properties and the modeling of the impact of defects on device performance are of fundamental importance. This presentation addresses this issue, by discussing a set of recent case studies on the topic; specifically, we focus on the experimental characterization of defects, and on the modeling of their impact on the electro-optical characteristics of the devices.
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