We report on the influence of different types of radiation on the nitride read-only memories (NROM ). The memory cells were irradiated by light ions (Boron), X-rays and c-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after c or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance

Libertino, S., Corso, D., Murè, G., Marino, A., Palumbo, F., Principato, F., et al. (2010). Radiation effects in nitride read-only memories. MICROELECTRONICS RELIABILITY, 50, 1857-1860 [10.1016/j.microrel.2010.07.068].

Radiation effects in nitride read-only memories

PRINCIPATO, Fabio;CANNELLA, Giuseppe;SCHILLACI, Tiziano;
2010

Abstract

We report on the influence of different types of radiation on the nitride read-only memories (NROM ). The memory cells were irradiated by light ions (Boron), X-rays and c-rays. Memory transistor parameters, such as threshold voltage and subthreshold drain leakage were studied as a function of the accumulated radiation dose and compared to the as-programmed (-erased) devices parameters. Their time evolution was registered in the range from few hours up to 5 months after the irradiation. The NROM cells showed good radiation robustness up to high accumulated doses. Sufficient program margin (difference of threshold voltage in the programmed state and the read-out voltage level) remained after c or X irradiation for absorbed doses exceeding 50 krad(Si) and 100 krad(Si), respectively. For Boron irradiation, the programmed devices remained stable up to the fluence of 1011 ions/cm2 (equivalent to 1 Mrad(Si) of TID tolerance
Libertino, S., Corso, D., Murè, G., Marino, A., Palumbo, F., Principato, F., et al. (2010). Radiation effects in nitride read-only memories. MICROELECTRONICS RELIABILITY, 50, 1857-1860 [10.1016/j.microrel.2010.07.068].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/10447/50880
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