In this paper, a design methodology for the minimization of various performance metrics of MOS Current-Mode Logic (MCML) circuits is described. In particular, it allows to minimize the delay under a given power consumption, the power consumption under a given delay and the power-delay product. Design solutions can be evaluated graphically or by simple and effective automatic procedures implemented within the MATLAB environment. The methodology exploits the novel concepts of crossing-point current and crossing-point capacitance. A useful feature of it is that it provides the designer with useful insights into the dependence of the performance metrics on design variables and fan-out capacitance. The methodology was validated by designing several MCML circuits in an IBM 130 nm CMOS process.

Caruso, G., Macchiarella, A. (2010). A Methodology for the Design of MOS Current-Mode Logic Circuits. IEICE TRANSACTIONS ON ELECTRONICS, E93-C(2), 172-181 [10.1587/transele.E93.C.172].

A Methodology for the Design of MOS Current-Mode Logic Circuits

CARUSO, Giuseppe;
2010-01-01

Abstract

In this paper, a design methodology for the minimization of various performance metrics of MOS Current-Mode Logic (MCML) circuits is described. In particular, it allows to minimize the delay under a given power consumption, the power consumption under a given delay and the power-delay product. Design solutions can be evaluated graphically or by simple and effective automatic procedures implemented within the MATLAB environment. The methodology exploits the novel concepts of crossing-point current and crossing-point capacitance. A useful feature of it is that it provides the designer with useful insights into the dependence of the performance metrics on design variables and fan-out capacitance. The methodology was validated by designing several MCML circuits in an IBM 130 nm CMOS process.
2010
Settore ING-INF/01 - Elettronica
Caruso, G., Macchiarella, A. (2010). A Methodology for the Design of MOS Current-Mode Logic Circuits. IEICE TRANSACTIONS ON ELECTRONICS, E93-C(2), 172-181 [10.1587/transele.E93.C.172].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/45222
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