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EnglishThe use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated solar cells showing S-shaped J-V curve and carried out an analysis of the reasons of such behavior using a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The extracted parameters are listed and analyzed to shade light on the reasons behind the low-performance cells.
Daniele scirè, Marco Bonadonna, Yifeng Zhao, Paul Procel, Olindo Isabella, Miro Zeman, et al. (2020). Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves. In AEIT International Annual Conference, 2020. Catania : Institute of Electrical and Electronics Engineers [10.23919/AEIT50178.2020.9241142].
| Data di pubblicazione: | 2020 | |
| Titolo: | Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves | |
| Autori: | ||
| Citazione: | Daniele scirè, Marco Bonadonna, Yifeng Zhao, Paul Procel, Olindo Isabella, Miro Zeman, et al. (2020). Analysis of Transition Metal Oxides based Heterojunction Solar Cells with S-shaped J-V curves. In AEIT International Annual Conference, 2020. Catania : Institute of Electrical and Electronics Engineers [10.23919/AEIT50178.2020.9241142]. | |
| Abstract: | The use of transition metal oxides for the selective carrier contact in the crystalline silicon solar cells technology is rising to interest for the excellent optoelectrical properties of these materials whose implementation, however, can result in lousy performing cells due to an S-shaped electrical characteristic. In this paper, we fabricated solar cells showing S-shaped J-V curve and carried out an analysis of the reasons of such behavior using a model involving the series of a standard cell equivalent circuit with a Schottky junction in order to explain these atypical performances. A good matching between the experimental measurements and the adopted theoretical model was obtained. The extracted parameters are listed and analyzed to shade light on the reasons behind the low-performance cells. | |
| ISBN: | 9788887237474 9788887237481 9781728173641 | |
| Digital Object Identifier (DOI): | 10.23919/AEIT50178.2020.9241142 | |
| Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica | |
| Appare nelle tipologie: | 2.07 Contributo in atti di convegno pubblicato in volume |
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