The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anodic TiO2thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.
Aglieri, V., Lullo, G., Mosca, M., MacAluso, R., Zaffora, A., Di Franco, F., et al. (2018). Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors. In IEEE 4th International Forum on Research and Technologies for Society and Industry, RTSI 2018 - Proceedings (pp. 1-6). Institute of Electrical and Electronics Engineers Inc. [10.1109/RTSI.2018.8548396].
Forming-Free and Self-Rectifying Resistive Switching Effect in Anodic Titanium Dioxide-Based Memristors
Aglieri, V.
;Lullo, G.;Mosca, M.;MacAluso, R.;Zaffora, A.;Di Franco, F.;Santamaria, M.;Lo Cicero, U.;
2018-01-01
Abstract
The paper presents the resistive switching of electroforming-free Ti/anodic-TiO2/Cu memristors. Anodic TiO2thin films were prepared by anodizing Ti layers. Microscale devices were fabricated by direct laser-assisted photolithography. Experimental results showed a bipolar and self-rectifying behavior of the devices, which could be useful for crossbar array configurations. Moreover, a gradual resistive switching of the devices in both directions was observed, indicating the presence of multi-level resistance states.
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