In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-To-noise ratio dependence on the transistor operating point.

Benfante, A., Giambra, M.A., Pernice, R., Stivala, S., Calandra, E., Parisi, A., et al. (2018). Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection. IEEE PHOTONICS JOURNAL, 10(2), 1-7 [10.1109/JPHOT.2018.2807923].

Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

Benfante, Antonio
;
Giambra, Marco A.;Pernice, Riccardo;Stivala, Salvatore;Calandra, Enrico;Parisi, Antonino;Cino, Alfonso C.;Busacca, Alessandro.
2018-01-01

Abstract

In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVD-grown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-To-noise ratio dependence on the transistor operating point.
2018
Benfante, A., Giambra, M.A., Pernice, R., Stivala, S., Calandra, E., Parisi, A., et al. (2018). Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection. IEEE PHOTONICS JOURNAL, 10(2), 1-7 [10.1109/JPHOT.2018.2807923].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/281482
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