Producing channel waveguides requires a photolithographic mask, but the standard technique of using thermally evaporated metal films for proton exchange has proved to be unsuitable for withstanding the rather aggressive process of reverse proton exchange. We report the fabrication of a nonstoichiometric silica mask by ion-plating plasma-assisted deposition. This mask is strong enough to resist both direct and reverse proton exchange and is also compatible with anisotropic dry etching for patterning the mask and with electric field poling. Our technique is a practical alternative to the use of SiO2 sputtered masks.
PARISI A, CINO AC, BUSACCA A, RIVA SANSEVERINO S (2004). Nonstoichiometric silica mask to fabricate reverse proton-exchange waveguides in lithium niobate crystals. APPLIED OPTICS, 43, No 4, 940-943 [10.1364/AO.43.000940].
Nonstoichiometric silica mask to fabricate reverse proton-exchange waveguides in lithium niobate crystals
PARISI, Antonino;CINO, Alfonso Carmelo;BUSACCA, Alessandro;RIVA SANSEVERINO, Stefano
2004-01-01
Abstract
Producing channel waveguides requires a photolithographic mask, but the standard technique of using thermally evaporated metal films for proton exchange has proved to be unsuitable for withstanding the rather aggressive process of reverse proton exchange. We report the fabrication of a nonstoichiometric silica mask by ion-plating plasma-assisted deposition. This mask is strong enough to resist both direct and reverse proton exchange and is also compatible with anisotropic dry etching for patterning the mask and with electric field poling. Our technique is a practical alternative to the use of SiO2 sputtered masks.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.