We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observed when the reverse bias voltage increases. With regards to our responsivity measurements, carried out in the abovementioned spectral range, we have found a peak around 669 nm for the N-on-P and a peak at 417 nm for the P-on-N SiPM.
Adamo, G., Agro', D., Stivala, S., Parisi, A., Giaconia, G., Busacca, A., et al. (2013). P-on-N and N-on-P silicon photomultipliers: responsivity comparison in the continuous wave regime. In Proc. Photonics North 2013.
Autori: | Adamo, G.; Agro', D.; Stivala, S.; Parisi, A.; Giaconia, G.; Busacca, A.; Mazzillo, M.; Sanfilippo, D.; Fallica, G. | |
Titolo: | P-on-N and N-on-P silicon photomultipliers: responsivity comparison in the continuous wave regime | |
Settore Scientifico Disciplinare: | Settore ING-INF/01 - Elettronica | |
Data di creazione: | 2013-06-03 | |
Nome del convegno: | Photonics North 2013 | |
Luogo del convegno: | Ottawa, Canada | |
Anno del convegno: | 3 giugno 2013 | |
Data di pubblicazione: | 2013 | |
Numero di pagine: | 00 | |
Citazione: | Adamo, G., Agro', D., Stivala, S., Parisi, A., Giaconia, G., Busacca, A., et al. (2013). P-on-N and N-on-P silicon photomultipliers: responsivity comparison in the continuous wave regime. In Proc. Photonics North 2013. | |
Tipologia: | 0 - Proceedings (TIPOLOGIA NON ATTIVA) | |
Appare nelle tipologie: | 0 - Proceedings (TIPOLOGIA NON ATTIVA) |
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