Stoichiometric CdSe nanotubes (NTs) with a length of ∼700 nm have been successfully grown by one-step electrochemical technique into anodic alumina membranes. Cyclovoltammetric method has been performed using porous anodic alumina as template electrode and an electrochemical bath containing Cd 2+ ions and SeO2. The as-prepared NTs have been identified as face-centred-cubic CdSe by XRD, while micro-Raman analysis reveals the typical peaks of nanostructured CdSe. The stoichiometric deposition of CdSe NTs formation is suggested by EDX analysis, with an average atomic percentage of Cd:Se of ∼0.93. Photoelectrochemical measurements reveal that CdSe NTs are photoactive materials with direct band gap of 1.75 eV and n-type semiconducting behaviour. © 2012 Elsevier Ltd. All rights reserved.
Bocchetta, P., Santamaria, M., Di Quarto, F. (2013). One-step electrochemical synthesis and physico-chemical characterization of CdSe nanotubes. ELECTROCHIMICA ACTA, 88(Volume 88), 340-346 [10.1016/j.electacta.2012.09.112].
One-step electrochemical synthesis and physico-chemical characterization of CdSe nanotubes
SANTAMARIA, Monica;DI QUARTO, Francesco
2013-01-01
Abstract
Stoichiometric CdSe nanotubes (NTs) with a length of ∼700 nm have been successfully grown by one-step electrochemical technique into anodic alumina membranes. Cyclovoltammetric method has been performed using porous anodic alumina as template electrode and an electrochemical bath containing Cd 2+ ions and SeO2. The as-prepared NTs have been identified as face-centred-cubic CdSe by XRD, while micro-Raman analysis reveals the typical peaks of nanostructured CdSe. The stoichiometric deposition of CdSe NTs formation is suggested by EDX analysis, with an average atomic percentage of Cd:Se of ∼0.93. Photoelectrochemical measurements reveal that CdSe NTs are photoactive materials with direct band gap of 1.75 eV and n-type semiconducting behaviour. © 2012 Elsevier Ltd. All rights reserved.
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