A novel approach for parameters determination in four lumped PV parametric model with operative range evaluation

The paper presents a novel numerical approach for the parameters determination of crystalline silicon PV models four lumped parameters equivalent circuit. The novel approach basically deals with a new method, alternative to the iterative one known in literature, to calculate the series resistance. Particularly, it allows the evaluation of the lumped parameters on the basis of the manufacturer’s datasheet. The new approach has been validated both in the Maximum Power Point (MPP) and close to it by comparing values and curves obtained by means of the model implementation in Matlab/Simulink environment with those related to some five parameters models and manufacturer curves. Results show that when temperature and radiation are at their STC (Standard Technical Condition) values, the four lumped parameters model here developed shapes the manufacturer I-V characteristics curves better than the other models. Moreover, what above has been investigated to be true even if radiation is lower than 1000 W/m2 but not when temperature is higher than 298.15 K. Finally, the four lumped parameters model here developed is to be preferred to the five lumped parameters ones if temperature value is lower than 323.15 K