Electroabsorption optical modulators have been fabricated on GaInAs/GaInAsP multiquantum well structures whose bandgap had been increased by laser photoabsorption-induced disordering. Modulation depths of 20dB have been obtained in material which has been bandgap blue shifted by as much as 120mm, while samples shifted by 80nm gave depths as high as 27dB.
Lullo G., McKee A., McLean C.J., Bryce A.C., Button C., Marsh J.H. (1994). Fabrication of electroabsorption optical modulators using laser disordered GalnAs/ GalnAsP multiquantum well structures. ELECTRONICS LETTERS, 30(19), 1623-1625 [10.1049/el:19941086].
Fabrication of electroabsorption optical modulators using laser disordered GalnAs/ GalnAsP multiquantum well structures
Lullo G.;
1994-09-15
Abstract
Electroabsorption optical modulators have been fabricated on GaInAs/GaInAsP multiquantum well structures whose bandgap had been increased by laser photoabsorption-induced disordering. Modulation depths of 20dB have been obtained in material which has been bandgap blue shifted by as much as 120mm, while samples shifted by 80nm gave depths as high as 27dB.
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