The authors demonstrate a new quantum well intermixing technique which allows bandgap shifts of typically 100meV to be realised with a high spatial resolution in a GaInAs/GaInAsP MQW waveguide structure. The material was irradiated with pulses from a Q-switched Nd:YAG laser, and was then subjected to rapid thermal annealing at 700 degrees C for several minutes. The spatial resolution of the disordering process was investigated across a masked interface, and was determined to be less than or equal to 25 mu m.
McLean C.J., McKee A., Lullo G., Bryce A.C., De La Rue R.M., Marsh J.H. (1995). Quantum well intermixing with high spatial selectivity using a pulsed laser technique. ELECTRONICS LETTERS, 31(15), 1285-1286 [10.1049/el:19950868].
Quantum well intermixing with high spatial selectivity using a pulsed laser technique
Lullo G.;
1995-07-20
Abstract
The authors demonstrate a new quantum well intermixing technique which allows bandgap shifts of typically 100meV to be realised with a high spatial resolution in a GaInAs/GaInAsP MQW waveguide structure. The material was irradiated with pulses from a Q-switched Nd:YAG laser, and was then subjected to rapid thermal annealing at 700 degrees C for several minutes. The spatial resolution of the disordering process was investigated across a masked interface, and was determined to be less than or equal to 25 mu m.
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