We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
Ciccarello, F., Zammito, S., & Zarcone, M. (2009). Hot-electron noise suppression in n-Si via the Hall effect. JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT, 2009, P01042-P01042 [10.1088/1742-5468/2009/01/P01042].
Hot-electron noise suppression in n-Si via the Hall effect
CICCARELLO, Francesco;ZARCONE, Michelangelo
2009
Abstract
We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
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