We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
Ciccarello, F., Zammito, S., & Zarcone, M. (2009). Hot-electron noise suppression in n-Si via the Hall effect. JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT, 2009, P01042-P01042.
Data di pubblicazione: | 2009 |
Titolo: | Hot-electron noise suppression in n-Si via the Hall effect |
Autori: | |
Citazione: | Ciccarello, F., Zammito, S., & Zarcone, M. (2009). Hot-electron noise suppression in n-Si via the Hall effect. JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT, 2009, P01042-P01042. |
Rivista: | |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/1742-5468/2009/01/P01042 |
Abstract: | We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity. |
Appare nelle tipologie: | 1.01 Articolo in rivista |
File in questo prodotto:
File | Descrizione | Tipologia | Licenza | |
---|---|---|---|---|
CZZ_pubblicato.pdf | N/A | Open Access Visualizza/Apri | ||
Ciccarello_2009_J._Stat._Mech._2009_P01042.pdf | N/A | Administrator Richiedi una copia |