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EnglishWe investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity.
Ciccarello, F., Zammito, S., & Zarcone, M. (2009). Hot-electron noise suppression in n-Si via the Hall effect. JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT, 2009, P01042-P01042.
| Data di pubblicazione: | 2009 |
| Titolo: | Hot-electron noise suppression in n-Si via the Hall effect |
| Autori: | |
| Citazione: | Ciccarello, F., Zammito, S., & Zarcone, M. (2009). Hot-electron noise suppression in n-Si via the Hall effect. JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT, 2009, P01042-P01042. |
| Rivista: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1088/1742-5468/2009/01/P01042 |
| Abstract: | We investigate how hot-electron fluctuations in n-type Si are affected by the presence of an intense (static) magnetic field in a Hall geometry. By using the Monte Carlo method, we find that the known Hall-effect-induced redistribution of electrons among valleys can suppress electron fluctuations with a simultaneous enhancement of the drift velocity. |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/10447/64874
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