We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions,improvements of ~10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface
Lombardo, S., Tringali, C., Cannella, G., Battaglia, A., Foti, M., Costa, N., et al. (2012). Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells. APPLIED PHYSICS LETTERS, 101(12), 123902-1-123902-4 [10.1063/1.4753936].
Data di pubblicazione: | 2012 | |
Titolo: | Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells | |
Autori: | ||
Citazione: | Lombardo, S., Tringali, C., Cannella, G., Battaglia, A., Foti, M., Costa, N., et al. (2012). Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells. APPLIED PHYSICS LETTERS, 101(12), 123902-1-123902-4 [10.1063/1.4753936]. | |
Rivista: | ||
Digital Object Identifier (DOI): | http://dx.doi.org/10.1063/1.4753936 | |
Appare nelle tipologie: | 1.01 Articolo in rivista |
File in questo prodotto:
File | Descrizione | Tipologia | Licenza | |
---|---|---|---|---|
_ojpstmp_stampPdf_d_17T08_18_APPLAB_101_12_123902_1.pdf | N/A | Administrator Richiedi una copia |