We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions,improvements of ~10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface
Lombardo, S., Tringali, C., Cannella, G., Battaglia, A., Foti, M., Costa, N., et al. (2012). Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells. APPLIED PHYSICS LETTERS, 101(12), 123902-1-123902-4 [10.1063/1.4753936].
Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells
PRINCIPATO, Fabio;
2012-01-01
Abstract
We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions,improvements of ~10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface
| File | Dimensione | Formato | |
|---|---|---|---|
|
_ojpstmp_stampPdf_d_17T08_18_APPLAB_101_12_123902_1.pdf
Solo gestori archvio
Dimensione
763.53 kB
Formato
Adobe PDF
|
763.53 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
