We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions,improvements of ~10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface

Lombardo, S., Tringali, C., Cannella, G., Battaglia, A., Foti, M., Costa, N., et al. (2012). Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells. APPLIED PHYSICS LETTERS, 101(12), 123902-1-123902-4 [10.1063/1.4753936].

Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells

PRINCIPATO, Fabio;
2012-01-01

Abstract

We report on the improvement of short circuit current (JSC), fill factor (FF), and open circuit resistance (ROC) in hydrogenated amorphous silicon (a-Si:H) photovoltaic cells with a p-type/intrinsic/n-type structure, achieved by the addition of an ultra-thin molybdenum film between the p-type film and the transparent conductive oxide/glass substrate. For suitable conditions,improvements of ~10% in average internal quantum efficiency and up to 5%–10% under standard illumination in JSC, FF, and ROC are observed. These are attributed to the excitation of surface plasmon polariton modes of the a-Si:H/Mo interface
Lombardo, S., Tringali, C., Cannella, G., Battaglia, A., Foti, M., Costa, N., et al. (2012). Plasmonic effects of ultra-thin Mo films on hydrogenated amorphous Si photovoltaic cells. APPLIED PHYSICS LETTERS, 101(12), 123902-1-123902-4 [10.1063/1.4753936].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/64558
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