The stimulated Raman adiabatic passage (STIRAP) is applied to a system coupled to a bath made of fully interacting two-level systems whose dynamics is studied by exploiting the generalized cluster correlation expansion (gCCE) theory.We specialize our analysis to a negatively charged silicon vacancy ($V^{−1}_{Si}$) in nonpurified 4H-SiC to assess the possibility of transferring population between two states of the ground manifold, also taking into account the interaction with a spherical nuclear-spin bath formed by nuclei of $^{29}Si$ and $^{13}C$. For this system, it is demonstrated that the presence of a small- or medium-sized bath has no effect on the protocol, finding in particular a set of parameter values for an efficient STIRAP process.
Fazio, T., Napoli, A., Militello, B. (2024). Generalized cluster correlation expansion theory for stimulated Raman adiabatic passage processes in the presence of a spin bath. PHYSICAL REVIEW. B, 109(22) [10.1103/physrevb.109.224305].
Generalized cluster correlation expansion theory for stimulated Raman adiabatic passage processes in the presence of a spin bath
Fazio, Tommaso
;Napoli, Anna;Militello, Benedetto
2024-06-12
Abstract
The stimulated Raman adiabatic passage (STIRAP) is applied to a system coupled to a bath made of fully interacting two-level systems whose dynamics is studied by exploiting the generalized cluster correlation expansion (gCCE) theory.We specialize our analysis to a negatively charged silicon vacancy ($V^{−1}_{Si}$) in nonpurified 4H-SiC to assess the possibility of transferring population between two states of the ground manifold, also taking into account the interaction with a spherical nuclear-spin bath formed by nuclei of $^{29}Si$ and $^{13}C$. For this system, it is demonstrated that the presence of a small- or medium-sized bath has no effect on the protocol, finding in particular a set of parameter values for an efficient STIRAP process.File | Dimensione | Formato | |
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PRB_109_224305(2024).pdf
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