We report on a promising approach to realize bifacial silicon carbide (SiC) based ultraviolet (UV) photodetectors with no metallic electrodes. The ohmic contact regions, consisting of a few conductive carbon-rich layers, while maintaining the necessary UV sensitivity for the photodetector’s operation, are directly realized using a nanosecond-pulsed excimer laser. By combining structural, optical, and electrical characterization, we demonstrate how this treatment allows the formation of ohmic contacts, on both front and rear side, using fluence higher than 1.6 J/cm2 and 3.2 J/cm2, respectively.

Isodiana Crupi, G.B. (2024). Toward A Metal-Free Contact Based On Multilayer Epitaxial Graphene On 4H-SiC. IEEE ELECTRON DEVICE LETTERS [10.1109/LED.2024.3403797].

Toward A Metal-Free Contact Based On Multilayer Epitaxial Graphene On 4H-SiC

Isodiana Crupi
Primo
Writing – Original Draft Preparation
;
Roberto Vabres
Membro del Collaboration Group
;
Roberto Macaluso
Membro del Collaboration Group
;
Mauro Mosca
Membro del Collaboration Group
;
2024-05-17

Abstract

We report on a promising approach to realize bifacial silicon carbide (SiC) based ultraviolet (UV) photodetectors with no metallic electrodes. The ohmic contact regions, consisting of a few conductive carbon-rich layers, while maintaining the necessary UV sensitivity for the photodetector’s operation, are directly realized using a nanosecond-pulsed excimer laser. By combining structural, optical, and electrical characterization, we demonstrate how this treatment allows the formation of ohmic contacts, on both front and rear side, using fluence higher than 1.6 J/cm2 and 3.2 J/cm2, respectively.
17-mag-2024
Settore ING-INF/01 - Elettronica
Isodiana Crupi, G.B. (2024). Toward A Metal-Free Contact Based On Multilayer Epitaxial Graphene On 4H-SiC. IEEE ELECTRON DEVICE LETTERS [10.1109/LED.2024.3403797].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/637054
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