Design Rules for Obtaining Narrow Luminescence from Semiconductors Made in Solution

Solution-processed semiconductors are in demand for presentandnext-generation optoelectronic technologies ranging from displaysto quantum light sources because of their scalability and ease ofintegration into devices with diverse form factors. One of the centralrequirements for semiconductors used in these applications is a narrowphotoluminescence (PL) line width. Narrow emission line widths areneeded to ensure both color and single-photon purity, raising thequestion of what design rules are needed to obtain narrow emissionfrom semiconductors made in solution. In this review, we first examinethe requirements for colloidal emitters for a variety of applicationsincluding light-emitting diodes, photodetectors, lasers, and quantuminformation science. Next, we will delve into the sources of spectralbroadening, including "homogeneous" broadening fromdynamical broadening mechanisms in single-particle spectra, heterogeneousbroadening from static structural differences in ensemble spectra,and spectral diffusion. Then, we compare the current state of theart in terms of emission line width for a variety of colloidal materialsincluding II-VI quantum dots (QDs) and nanoplatelets, III-VQDs, alloyed QDs, metal-halide perovskites including nanocrystalsand 2D structures, doped nanocrystals, and, finally, as a point ofcomparison, organic molecules. We end with some conclusions and connections,including an outline of promising paths forward.