In this work, the formation of micrometer-size crystalline monolayer (1L) MoS2 flakes with triangular shape and a central multilayer core is obtained by the sulfurization at 800 °C of pre-deposited ultrathin MoOx films (1.2–1.8 nm) on c-sapphire substrates. The thickness uniformity, crystalline quality, doping and strain distribution in the MoS2 flakes as a function of the initial MoOx thickness was evaluated by micro-Raman (μR) mapping. The excellent crystalline quality of the triangular 1L-MoS2 flakes was confirmed by micro-photoluminescence (μPL) maps, showing a very intense peak at ∼1.85 eV, that decreases in the central part, as expected for multilayers MoS2. A biaxial strain of ∼0.38–0.4% was deduced from the μPL data, in perfect agreement with μR results. Our results show how the sulfurization of pre-deposited MoOx films on c-sapphire allows, under proper conditions, to obtain 1L-MoS2 flakes with quality comparable to the one typically reported by the conventional chemical vapour deposition, with important implications for device applications.

Panasci S.E., Schiliro E., Koos A., Nemeth M., Cannas M., Agnello S., et al. (2023). Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films. MICROELECTRONIC ENGINEERING, 274, 111967 [10.1016/j.mee.2023.111967].

Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films

Cannas M.;Agnello S.;
2023-03-21

Abstract

In this work, the formation of micrometer-size crystalline monolayer (1L) MoS2 flakes with triangular shape and a central multilayer core is obtained by the sulfurization at 800 °C of pre-deposited ultrathin MoOx films (1.2–1.8 nm) on c-sapphire substrates. The thickness uniformity, crystalline quality, doping and strain distribution in the MoS2 flakes as a function of the initial MoOx thickness was evaluated by micro-Raman (μR) mapping. The excellent crystalline quality of the triangular 1L-MoS2 flakes was confirmed by micro-photoluminescence (μPL) maps, showing a very intense peak at ∼1.85 eV, that decreases in the central part, as expected for multilayers MoS2. A biaxial strain of ∼0.38–0.4% was deduced from the μPL data, in perfect agreement with μR results. Our results show how the sulfurization of pre-deposited MoOx films on c-sapphire allows, under proper conditions, to obtain 1L-MoS2 flakes with quality comparable to the one typically reported by the conventional chemical vapour deposition, with important implications for device applications.
21-mar-2023
Settore FIS/01 - Fisica Sperimentale
Panasci S.E., Schiliro E., Koos A., Nemeth M., Cannas M., Agnello S., et al. (2023). Micrometer-size crystalline monolayer MoS2 domains obtained by sulfurization of molybdenum oxide ultrathin films. MICROELECTRONIC ENGINEERING, 274, 111967 [10.1016/j.mee.2023.111967].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/589292
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