The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.
Filatov D.O., Koryazhkina M.N., Novikov A.S., Shishmakova V.A., Shenina M.E., Antonov I.N., et al. (2022). Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor. CHAOS, SOLITONS AND FRACTALS, 156, 111810 [10.1016/j.chaos.2022.111810].
Effect of internal noise on the relaxation time of an yttria stabilized zirconia-based memristor
Carollo A.;Valenti D.;Spagnolo B.
2022-03-01
Abstract
The effects of temperature on the switching kinetics of an yttrium-stabilized zirconia-based memristor from a low-resistance state to a high-resistance state have been experimentally investigated. It was found that the memristor relaxation time depends on the temperature in a non-monotonous way, with a maximum observed at the temperature close to 55 °C. This nonmonotonic behavior is a signature of the noise-enhanced stability phenomenon observed in all physical and complex systems characterized by metastable states.File | Dimensione | Formato | |
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