Layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing (PDA). The density of states (DOS) distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a phothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with PDA temperature and film thickness.
D. Scirè, R. Macaluso, M. Mosca, S. Mirabella, A. Gulino, O. Isabella, M. Zeman, I. Crupi (28 June - 2 July 2021).Characterization of defect density states in MoOx for c-Si solar cell applications.
Characterization of defect density states in MoOx for c-Si solar cell applications
D. Scirè
;R. Macaluso;M. Mosca;I. Crupi
Abstract
Layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing (PDA). The density of states (DOS) distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a phothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with PDA temperature and film thickness.
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