Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.
Scirè, D., Macaluso, R., Mosca, M., Mirabella, S., Gulino, A., Isabella, O., et al. (2021). Characterization of the defect density states in MoOx for c-Si solar cell applications. SOLID-STATE ELECTRONICS, 185 [10.1016/j.sse.2021.108135].
Characterization of the defect density states in MoOx for c-Si solar cell applications
Scirè, D.
;Macaluso, R.;Mosca, M.;Crupi, I.
2021-11-01
Abstract
Thin layers of MoOx have been deposited by thermal evaporation followed by post-deposition annealing. The density of states distributions of the MoOx films were extracted deconvoluting the absorption spectra, measured by a photothermal deflection spectroscopy setup, including the small polaron contribution. Results revealed a sub-band defect distribution centered 1.1 eV below the conduction band; the amplitude of this distribution was found to increase with post-deposition annealing temperature and film thickness.
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