AACVD (aerosol-assisted chemical vapour deposition) using (PhS)4Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450°C the film deposited consists of mainly SnS2 while at 500°C SnS is the dominant component. The mechanism of decomposition of (PhS)4Sn is discussed and the structure of the precursor presented.
Barone G., Hibbert T.G., Mahon M.F., Molloy K.C., Price L.S., Parkin I.P., et al. (2001). Deposition of tin sulfide thin films from tin(IV) thiolate precursors. JOURNAL OF MATERIALS CHEMISTRY, 11(2), 464-468 [10.1039/b005888m].
Deposition of tin sulfide thin films from tin(IV) thiolate precursors
Barone G.Membro del Collaboration Group
;
2001-01-01
Abstract
AACVD (aerosol-assisted chemical vapour deposition) using (PhS)4Sn as precursor leads to the deposition of Sn3O4 in the absence of H2S and tin sulfides when H2S is used as co-reactant. At 450°C the film deposited consists of mainly SnS2 while at 500°C SnS is the dominant component. The mechanism of decomposition of (PhS)4Sn is discussed and the structure of the precursor presented.
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