Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate

Filatov, DO; Novikov, AS; Baranova, VN; Antonov, DA; Kruglov, AV; Antonov, IN; Zdoroveyshchev, AV; Koryazhkina, MN; Gorshkov, ON; Dubkov, AA; Carollo, A; Spagnolo, B

doi:10.1088/1742-5468/ab69ff

We report on the results of the experimental investigations of the local resistive switching (RS) in the contact of a conductive atomic force microscope (CAFM) probe to a nanometer-thick yttria stabilized zirconia (YSZ) film on a conductive substrate under a Gaussian noise voltage applied between the probe and the substrate. The virtual memristor was found to switch randomly between the low resistance state and the high resistance state as a random telegraph signal (RTS). The potential profile of the virtual memristor calculated from its response to the Gaussian white noise shows two local minima, which is peculiar of a bistable nonlinear system.

Filatov, D.O., Novikov, A.S., Baranova, V.N., Antonov, D.A., Kruglov, A.V., Antonov, I.N., et al. (2020). Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate. JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT, 2020(2), 024005 [10.1088/1742-5468/ab69ff].

Data di pubblicazione:	2020
Titolo:	Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate
Autori:	Filatov, D O Novikov, A S Baranova, V N Antonov, D A Kruglov, A V Antonov, I N Zdoroveyshchev, A V Koryazhkina, M N Gorshkov, O N Dubkov, A A Carollo, Angelo SPAGNOLO, Bernardo mostra contributor esterni nascondi contributor esterni
Citazione:	Filatov, D.O., Novikov, A.S., Baranova, V.N., Antonov, D.A., Kruglov, A.V., Antonov, I.N., et al. (2020). Experimental investigations of local stochastic resistive switching in yttria stabilized zirconia film on a conductive substrate. JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT, 2020(2), 024005 [10.1088/1742-5468/ab69ff].
Rivista:	JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT
Digital Object Identifier (DOI):	http://dx.doi.org/10.1088/1742-5468/ab69ff
Abstract:	We report on the results of the experimental investigations of the local resistive switching (RS) in the contact of a conductive atomic force microscope (CAFM) probe to a nanometer-thick yttria stabilized zirconia (YSZ) film on a conductive substrate under a Gaussian noise voltage applied between the probe and the substrate. The virtual memristor was found to switch randomly between the low resistance state and the high resistance state as a random telegraph signal (RTS). The potential profile of the virtual memristor calculated from its response to the Gaussian white noise shows two local minima, which is peculiar of a bistable nonlinear system.
Appare nelle tipologie:	1.01 Articolo in rivista

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http://hdl.handle.net/10447/408144

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