We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluctuations. This paves the way for using the intensity of fluctuations as a control parameter for switching dynamics in memristive devices.

Agudov, N.V., Safonov, A.V., Krichigin, A.V., Kharcheva, A.A., Dubkov, A.A., Valenti, D., et al. (2020). Nonstationary distributions and relaxation times in a stochastic model of memristor. JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT, 2020(2), 024003 [10.1088/1742-5468/ab684a].

Nonstationary distributions and relaxation times in a stochastic model of memristor

Kharcheva, A A;Valenti, D;Carollo, A;Spagnolo, B
2020-01-01

Abstract

We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluctuations. This paves the way for using the intensity of fluctuations as a control parameter for switching dynamics in memristive devices.
Agudov, N.V., Safonov, A.V., Krichigin, A.V., Kharcheva, A.A., Dubkov, A.A., Valenti, D., et al. (2020). Nonstationary distributions and relaxation times in a stochastic model of memristor. JOURNAL OF STATISTICAL MECHANICS: THEORY AND EXPERIMENT, 2020(2), 024003 [10.1088/1742-5468/ab684a].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/408142
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