The generation of non-bridging oxygen hole center („Si–O) was investigated in a wide variety of natural (fused quartz) and synthetic silica samples exposed to different c- and b-irradiation doses by looking at its optical bands. We distinguish two different generation processes: intrinsic associated with the cleavage of Si–O bond and characterized by a sublinear law and extrinsic due to the conversion of OH precursor characterized by a growth curve with a saturating tendency. The interplay between the two processes and the role of H are discussed.
Vaccaro, L., Cannas, M., Boizot, B., Parlato, A. (2007). Radiation induced generation of non-bridging oxygen hole center in silica: Intrinsic and extrinsic processes. JOURNAL OF NON-CRYSTALLINE SOLIDS, 353(5-7), 586-589 [10.1016/j.jnoncrysol.2006.10.028].
Radiation induced generation of non-bridging oxygen hole center in silica: Intrinsic and extrinsic processes
VACCARO, Lavinia;CANNAS, Marco;PARLATO, Aldo
2007-01-01
Abstract
The generation of non-bridging oxygen hole center („Si–O) was investigated in a wide variety of natural (fused quartz) and synthetic silica samples exposed to different c- and b-irradiation doses by looking at its optical bands. We distinguish two different generation processes: intrinsic associated with the cleavage of Si–O bond and characterized by a sublinear law and extrinsic due to the conversion of OH precursor characterized by a growth curve with a saturating tendency. The interplay between the two processes and the role of H are discussed.
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