The macroscopic properties of silica can be modified by the presence of local microscopic modifications at the scale of the basic molecular units (point defects). Such defects can be generated during the production of glass, devices, or by the environments where the latter have to operate, impacting on the devices’ performance. For these reasons, the identification of defects, their generation processes, and the knowledge of their electrical and optical features are relevant for microelectronics and optoelectronics. The aim of this manuscript is to report some examples of how defects can be generated, how they can impact device performance, and how a defect species or a physical phenomenon that is a disadvantage in some fields can be used as an advantage in others.

Alessi A., Kuhnhenn J., Buscarino G., Di Francesca D., Agnello S. (2019). The relevance of point defects in studying silica-based materials from bulk to nanosystems. ELECTRONICS, 8(12), 1378-1393 [10.3390/electronics8121378].

The relevance of point defects in studying silica-based materials from bulk to nanosystems

Alessi A.;Buscarino G.;Di Francesca D.;Agnello S.
2019-01-01

Abstract

The macroscopic properties of silica can be modified by the presence of local microscopic modifications at the scale of the basic molecular units (point defects). Such defects can be generated during the production of glass, devices, or by the environments where the latter have to operate, impacting on the devices’ performance. For these reasons, the identification of defects, their generation processes, and the knowledge of their electrical and optical features are relevant for microelectronics and optoelectronics. The aim of this manuscript is to report some examples of how defects can be generated, how they can impact device performance, and how a defect species or a physical phenomenon that is a disadvantage in some fields can be used as an advantage in others.
https://www.mdpi.com/2079-9292/8/12/1378/pdf
Alessi A., Kuhnhenn J., Buscarino G., Di Francesca D., Agnello S. (2019). The relevance of point defects in studying silica-based materials from bulk to nanosystems. ELECTRONICS, 8(12), 1378-1393 [10.3390/electronics8121378].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/386803
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