Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries

Giambra, MA; Benz, C; Fan, W; Thurmer, M; Balachandran, G; Benfante, A; Pernice, R; Pandey, H; Boopathi, M; Jang, M; Ahn, J; Stivala, S; Calandra, E; Arnone, C; Cusumano, P; Busacca, A; Pernice, WHP; Danneau, R

doi:10.1109/JEDS.2019.2939574

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In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.

Data di pubblicazione:	2019
Titolo:	Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries
Autori:	Giambra, Marco Angelo Benz, Christian Wu, Fan Thurmer, Maximillian Balachandran, Geethu Benfante, Antonio PERNICE, Riccardo Pandey, Himadri Boopathi, Muraleetharan Jang, Min-Ho Ahn, Jong-Hyun STIVALA, Salvatore CALANDRA, Enrico ARNONE, Claudio CUSUMANO, Pasquale BUSACCA, Alessandro Pernice, Wolfram H. P. Danneau, Romain mostra contributor esterni nascondi contributor esterni
Citazione:	Giambra, M., Benz, C., Wu, F., Thurmer, M., Balachandran, G., Benfante, A., et al. (2019). Investigation on Metal–Oxide Graphene Field-Effect Transistors With Clamped Geometries. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 7, 964-968.
Rivista:	IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Digital Object Identifier (DOI):	http://dx.doi.org/10.1109/JEDS.2019.2939574
Abstract:	In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ clamped metal contacts also for source and drain, as well as an optimized graphene meandered pattern for source contacting, in order to reduce parasitic resistance. Our experimental results demonstrate that MOGFETs with the proposed structure show improved high frequency performance, in terms of maximum available gain and transition frequency values, as a consequence of the higher equivalent transconductance obtained.
Settore Scientifico Disciplinare:	Settore ING-INF/01 - Elettronica Settore ING-INF/02 - Campi Elettromagnetici
Appare nelle tipologie:	1.01 Articolo in rivista

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