Silicon-based heterojunction technology (HJT) is one of the most promising candidates for high performance and low cost solar cells with world-record efficiency close to 27% in IBC architecture. The HJT exploits the excellent passivation properties of hydrogenated amorphous silicon (a-Si:H); although, the use of doped a-Si:H has drawbacks such as parasitic absorption and low-thermal budget to cope with back-end metallization. Replacing the p-type a-Si:H with molybdenum oxide (MoOx) is a viable alternative. Optimizing this hole-selective layer is needed; however information on the defect density of states (DOS), linked to oxygen vacancies is still lacking.
|Titolo:||Density of States evaluation of Molybdenum Oxide for c-Si solar cell|
SCIRE', Daniele (Corresponding)
|Citazione:||Scire', D., Zhou, Y., Procel, P., Yang, G., Mirabella, S., Spitaleri, L., et al.Density of States evaluation of Molybdenum Oxide for c-Si solar cell.|
|Appare nelle tipologie:||6.2 Abstract non pubblicato|