Archivio istituzionale della ricerca dell'Università degli Studi di Palermo
IRIS è il sistema di gestione integrata dei dati della ricerca (persone, pubblicazioni, progetti, attività) adottato dall’Università di Palermo, e ha lo scopo di raccogliere, conservare, documentare, e diffondere ad accesso aperto le informazioni relative alla produzione scientifica degli autori afferenti all’Ateneo.
EnglishWe report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm2 V-1 s-1 at room temperature and ∼120 000 cm2 V-1 s-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30 000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10 000 cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.
De Fazio D., Purdie D.G., Ott A.K., Braeuninger-Weimer P., Khodkov T., Goossens S., et al. (2019). High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition. ACS NANO, 13(8), 8926-8935.
| Data di pubblicazione: | 2019 |
| Titolo: | High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition |
| Autori: | |
| Citazione: | De Fazio D., Purdie D.G., Ott A.K., Braeuninger-Weimer P., Khodkov T., Goossens S., et al. (2019). High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition. ACS NANO, 13(8), 8926-8935. |
| Rivista: | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1021/acsnano.9b02621 |
| Abstract: | We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm2 V-1 s-1 at room temperature and ∼120 000 cm2 V-1 s-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30 000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10 000 cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach. |
| URL: | http://pubs.acs.org/journal/ancac3 |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
File in questo prodotto:
| File | Descrizione | Tipologia | Licenza | |
|---|---|---|---|---|
| HighMobility-WetTransferred-Graphene-Grown-by-Chemical-Vapor-Deposition2019ACS-Nano.pdf | Pre-print | Administrator Richiedi una copia |
Copyright © 2020