We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm2 V-1 s-1 at room temperature and ∼120 000 cm2 V-1 s-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30 000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10 000 cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.

De Fazio D., Purdie D.G., Ott A.K., Braeuninger-Weimer P., Khodkov T., Goossens S., et al. (2019). High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition. ACS NANO, 13(8), 8926-8935 [10.1021/acsnano.9b02621].

High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition

Livreri P.;
2019-01-01

Abstract

We report high room-temperature mobility in single-layer graphene grown by chemical vapor deposition (CVD) after wet transfer on SiO2 and hexagonal boron nitride (hBN) encapsulation. By removing contaminations, trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to ∼70000 cm2 V-1 s-1 at room temperature and ∼120 000 cm2 V-1 s-1 at 9K. These are more than twice those of previous wet-transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room-temperature mobilities of ∼30 000 cm2 V-1 s-1. These results show that, with appropriate encapsulation and cleaning, room-temperature mobilities well above 10 000 cm2 V-1 s-1 can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.
Settore ING-INF/01 - Elettronica
http://pubs.acs.org/journal/ancac3
De Fazio D., Purdie D.G., Ott A.K., Braeuninger-Weimer P., Khodkov T., Goossens S., et al. (2019). High-Mobility, Wet-Transferred Graphene Grown by Chemical Vapor Deposition. ACS NANO, 13(8), 8926-8935 [10.1021/acsnano.9b02621].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/373653
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