Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties (e.g. retention, endurance, etc.). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state properties of the anodic oxides is studied in relation to the final ReRAM device performances demonstrating the great potentiality of this technique to produce high quality oxide thin films for resistive switching memories.

Zaffora, A., Di Quarto, F., Habazaki, H., Valov, I., Santamaria, M. (2019). Electrochemically prepared oxides for resistive switching memories. FARADAY DISCUSSIONS, 213(0), 165-181 [10.1039/c8fd00112j].

Electrochemically prepared oxides for resistive switching memories

Zaffora, A.;Santamaria, M.
2019-01-01

Abstract

Redox-based resistive switching memories (ReRAMs) are the strongest candidates for next generation nonvolatile memories. These devices are commonly composed of metal/solid electrolyte/metal junctions, where the solid electrolyte is usually an oxide layer. A key aspect in the ReRAMs development is the solid electrolyte engineering, since it is crucial to tailor the material properties for obtaining excellent switching properties (e.g. retention, endurance, etc.). Here we present an anodizing process as a non vacuum and low temperature electrochemical technique for growing oxides with tailored structural and electronic properties. The effect of the anodizing conditions on the solid state properties of the anodic oxides is studied in relation to the final ReRAM device performances demonstrating the great potentiality of this technique to produce high quality oxide thin films for resistive switching memories.
2019
Settore ING-IND/23 - Chimica Fisica Applicata
http://pubs.rsc.org/en/journals/journal/fd
Zaffora, A., Di Quarto, F., Habazaki, H., Valov, I., Santamaria, M. (2019). Electrochemically prepared oxides for resistive switching memories. FARADAY DISCUSSIONS, 213(0), 165-181 [10.1039/c8fd00112j].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/351573
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