A study of the electronic properties of thin (drop 25 nm) a-WO3 and a-Nb2O5 is presented. Based on theory of amorphous semiconductor Schottky barrier the fitting of admittance curves in a large range of electrode potential (around 9 V) and a.c. frequency (100 Hz - 10 kHz) is performed. A density of electronic state distribution (DOS) is derived, which mimics the mobile defects distribution suggested by the classical high field model of oxides growth.
DI QUARTO F, SANTAMARIA M (2003). Electronic properties and mobile defects distribution in amorphous semiconducting passive films. In V. BIRSS, L. BURKE, A. R. HILLMAN, AND R. S. LILLARD (a cura di), Surface Oxide Films (pp. 116-132). NEW YORK : The Electrochemical Society, INC..
Electronic properties and mobile defects distribution in amorphous semiconducting passive films
DI QUARTO, Francesco;SANTAMARIA, Monica
2003-01-01
Abstract
A study of the electronic properties of thin (drop 25 nm) a-WO3 and a-Nb2O5 is presented. Based on theory of amorphous semiconductor Schottky barrier the fitting of admittance curves in a large range of electrode potential (around 9 V) and a.c. frequency (100 Hz - 10 kHz) is performed. A density of electronic state distribution (DOS) is derived, which mimics the mobile defects distribution suggested by the classical high field model of oxides growth.
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