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EnglishWe report a study by electron paramagnetic resonance on the E0 point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on -ray irradiated oxygen-deficient materials and pointed out that the 29Si hyperfine structure of the E0 consists of a pair of lines split by 49 mT. On the basis of the experimental results, a microscopic model is proposed for the E0 center, consisting of a hole trapped in an oxygen vacancy with the unpaired electron sp3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO2 matrix.
Buscarino, G., Agnello, S., & Gelardi, F. (2006). 29Si Hyperfine structure of the E’_alfa center in amorphous silicon dioxide. PHYSICAL REVIEW LETTERS, 97(-), 1-4 [10.1103/PhysRevLett.97.135502].
| Data di pubblicazione: | 2006 | |
| Titolo: | 29Si Hyperfine structure of the E’_alfa center in amorphous silicon dioxide | |
| Autori: | ||
| Citazione: | Buscarino, G., Agnello, S., & Gelardi, F. (2006). 29Si Hyperfine structure of the E’_alfa center in amorphous silicon dioxide. PHYSICAL REVIEW LETTERS, 97(-), 1-4 [10.1103/PhysRevLett.97.135502]. | |
| Rivista: | ||
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevLett.97.135502 | |
| Abstract: | We report a study by electron paramagnetic resonance on the E0 point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on -ray irradiated oxygen-deficient materials and pointed out that the 29Si hyperfine structure of the E0 consists of a pair of lines split by 49 mT. On the basis of the experimental results, a microscopic model is proposed for the E0 center, consisting of a hole trapped in an oxygen vacancy with the unpaired electron sp3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO2 matrix. | |
| Appare nelle tipologie: | 1.01 Articolo in rivista |
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http://hdl.handle.net/10447/26055
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