A detailed study of the electronic properties of thin (>20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and, more specifically, the density of electronic states (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behavior of a-SC Schottky barrier.
Di Quarto, F., Di Franco, F., Miraghaei, S., Santamaria, M., La Mantia, F. (2017). The amorphous semiconductor Schottky barrier approach to study the electronic properties of anodic films on Ti. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 164(9), C516-C525 [10.1149/2.0551709jes].
The amorphous semiconductor Schottky barrier approach to study the electronic properties of anodic films on Ti
Di Quarto, F.;Di Franco, F.
;Santamaria, M.;
2017-01-01
Abstract
A detailed study of the electronic properties of thin (>20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and, more specifically, the density of electronic states (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behavior of a-SC Schottky barrier.
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