Redox‐based resistive switching memories (ReRAMs) are strongest candidates for the next‐generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2O5‐based devices by anodizing. This method allows to grow high‐quality and dense oxide thin films onto a metallic substrates with precise control over morphology and thickness. Electrochemical‐oxide‐based devices demonstrate superior properties, i.e., endurance of at least 106 pulse cycles and/or 103I–V sweeps maintaining a good memory window with a low dispersion in ROFF and RON values, nanosecond fast switching, and data retention of at least 104 s. Multilevel programing capability is presented with both I–V sweeps and pulse measurements. Thus, it is shown that anodizing has a great prospective as a method for preparation of dense oxide films for resistive switching memories

Zaffora, A., Cho, D., Lee, K., Di Quarto, F., Waser, R., Santamaria, M., et al. (2017). Electrochemical Tantalum Oxide for Resistive Switching Memories. ADVANCED MATERIALS, 29(43) [10.1002/adma.201703357].

Electrochemical Tantalum Oxide for Resistive Switching Memories

Zaffora, Andrea;Di Quarto, Francesco;Santamaria, Monica
;
2017-01-01

Abstract

Redox‐based resistive switching memories (ReRAMs) are strongest candidates for the next‐generation nonvolatile memories fulfilling the criteria for fast, energy efficient, and scalable green IT. These types of devices can also be used for selector elements, alternative logic circuits and computing, and memristive and neuromorphic operations. ReRAMs are composed of metal/solid electrolyte/metal junctions in which the solid electrolyte is typically a metal oxide or multilayer oxides structures. Here, this study offers an effective and cheap electrochemical approach to fabricate Ta/Ta2O5‐based devices by anodizing. This method allows to grow high‐quality and dense oxide thin films onto a metallic substrates with precise control over morphology and thickness. Electrochemical‐oxide‐based devices demonstrate superior properties, i.e., endurance of at least 106 pulse cycles and/or 103I–V sweeps maintaining a good memory window with a low dispersion in ROFF and RON values, nanosecond fast switching, and data retention of at least 104 s. Multilevel programing capability is presented with both I–V sweeps and pulse measurements. Thus, it is shown that anodizing has a great prospective as a method for preparation of dense oxide films for resistive switching memories
2017
Settore ING-IND/23 - Chimica Fisica Applicata
Zaffora, A., Cho, D., Lee, K., Di Quarto, F., Waser, R., Santamaria, M., et al. (2017). Electrochemical Tantalum Oxide for Resistive Switching Memories. ADVANCED MATERIALS, 29(43) [10.1002/adma.201703357].
File in questo prodotto:
File Dimensione Formato  
2017_AdvMater_Res-switching-anodic-Ta-oxide.pdf

Solo gestori archvio

Tipologia: Versione Editoriale
Dimensione 983.86 kB
Formato Adobe PDF
983.86 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
2017_AdvMater_Santamaria-postprint.pdf

accesso aperto

Tipologia: Post-print
Dimensione 1.23 MB
Formato Adobe PDF
1.23 MB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10447/252000
Citazioni
  • ???jsp.display-item.citation.pmc??? 6
  • Scopus 73
  • ???jsp.display-item.citation.isi??? 69
social impact