The effects of b-irradiation on the OH-related infrared (IR) absorption band in synthetic wet silica samples have been investigated by Fourier transform infrared spectroscopy. Depending on the accumulated doses, b-irradiation affects different zones of the IR composite band at about 3670 cm 1 , assigned to the OH stretching modes of silanol groups. These modifications are independent of the original OH content. The results are discussed considering possible radiation-induced changes of the silanol bonding configuration and of the glass network. These are monitored by revealing the IR band a 2260 cm 1 , which is related to the distribution of Si–O–Si bond angle. We have identified the existence of two regimes as a function of radiation dose; low radiation doses produce the reduction of the „Si-OH hydrogen- bonded states in favor of the isolated ones, while the opposite effect is observed at higher doses, where the formation of H-bonded pairs seems to be favored. 2007 Elsevier B.V. All rights reserved.
Navarra, G., Boscaino, R., Leone, M., Boizot, B. (2007). Irradiation effects on the OH-related infrared absorption band in synthetic wet silica. JOURNAL OF NON-CRYSTALLINE SOLIDS, 353, 555-558 [10.1016/j.jnoncrysol.2006.10.023].
Irradiation effects on the OH-related infrared absorption band in synthetic wet silica.
NAVARRA, Giovanna;BOSCAINO, Roberto;LEONE, Maurizio;
2007-01-01
Abstract
The effects of b-irradiation on the OH-related infrared (IR) absorption band in synthetic wet silica samples have been investigated by Fourier transform infrared spectroscopy. Depending on the accumulated doses, b-irradiation affects different zones of the IR composite band at about 3670 cm 1 , assigned to the OH stretching modes of silanol groups. These modifications are independent of the original OH content. The results are discussed considering possible radiation-induced changes of the silanol bonding configuration and of the glass network. These are monitored by revealing the IR band a 2260 cm 1 , which is related to the distribution of Si–O–Si bond angle. We have identified the existence of two regimes as a function of radiation dose; low radiation doses produce the reduction of the „Si-OH hydrogen- bonded states in favor of the isolated ones, while the opposite effect is observed at higher doses, where the formation of H-bonded pairs seems to be favored. 2007 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.